KFG5616U1M-DIB datasheet, memory equivalent, Samsung semiconductor

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datasheet Download (Size : 1.29MB)

Features and benefits

* Design Technology: 0.12µm
* Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V <.

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

is revised. 3. Changed Read while Load and Write While Program diagram. 4. Revised OTP Flow Chart 5. Added Multi Block Erase operation cases 6. Added Spare Assignment information 7. Added NAND Array Memory Map 8. Added OTP load/program/lock operation.

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